Send Message
Good price online

products details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
Integrated Circuit Chip
Created with Pixso. IXTY08N100D2 N Channel MOSFET IC 1000 V 800mA Tc 60W Tc Surface Mount TO-252AA

IXTY08N100D2 N Channel MOSFET IC 1000 V 800mA Tc 60W Tc Surface Mount TO-252AA

Brand Name: Original
Model Number: IXTY08N100D2
MOQ: 1
Price: Negotiation
Delivery Time: 3-4days
Payment Terms: TT
Detail Information
Place of Origin:
Original
Certification:
Original
FET Type:
N-Channel
Drain To Source Voltage (Vdss):
1000 V
Current - Continuous Drain (Id) @ 25°C:
800mA (Tc)
Rds On (Max) @ Id, Vgs:
21Ohm @ 400mA, 0V
Gate Charge (Qg) (Max) @ Vgs:
14.6 NC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
325 PF @ 25 V
FET Feature:
Depletion Mode
Packaging Details:
carton box
Supply Ability:
100
Highlight:

IXTY08N100D2

,

IXTY08N100D2 N Channel MOSFET IC

,

TO-252AA N Channel MOSFET IC

Product Description

CSR8670C-IBBH-R IC Chip RF TxRx + MCU Bluetooth Bluetooth v4.0 2.4GHz 112-VFBGA 
 
IXTY08N100D2 are from factory inventory, pls check your demands and pls contact us with with target price.
 
Specifications of IXTY08N100D2
 

TypeDescription
CategoryDiscrete Semiconductor Products
 Transistors
 FETs, MOSFETs
 Single FETs, MOSFETs
MfrIXYS
SeriesDepletion
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs21Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs14.6 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds325 pF @ 25 V
FET FeatureDepletion Mode
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product NumberIXTY08

 
Features of IXTY08N100D2
 
• Normally ON Mode
International Standard Packages
• Molding Epoxies Meet UL94V-0Flammability Classification
 
Applications of IXTY08N100D2
 
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
 
Addvantages of IXTY08N100D2
 
• Easy to Mount
• Space Savings
• High Power Density
 
Environmental & Export Classifications of IXTY08N100D2
 

AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095

 
IXTY08N100D2 N Channel MOSFET IC 1000 V 800mA Tc 60W Tc Surface Mount TO-252AA 0
 

Good price online

Products Details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
Integrated Circuit Chip
Created with Pixso. IXTY08N100D2 N Channel MOSFET IC 1000 V 800mA Tc 60W Tc Surface Mount TO-252AA

IXTY08N100D2 N Channel MOSFET IC 1000 V 800mA Tc 60W Tc Surface Mount TO-252AA

Brand Name: Original
Model Number: IXTY08N100D2
MOQ: 1
Price: Negotiation
Packaging Details: carton box
Payment Terms: TT
Detail Information
Place of Origin:
Original
Brand Name:
Original
Certification:
Original
Model Number:
IXTY08N100D2
FET Type:
N-Channel
Drain To Source Voltage (Vdss):
1000 V
Current - Continuous Drain (Id) @ 25°C:
800mA (Tc)
Rds On (Max) @ Id, Vgs:
21Ohm @ 400mA, 0V
Gate Charge (Qg) (Max) @ Vgs:
14.6 NC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
325 PF @ 25 V
FET Feature:
Depletion Mode
Minimum Order Quantity:
1
Price:
Negotiation
Packaging Details:
carton box
Delivery Time:
3-4days
Payment Terms:
TT
Supply Ability:
100
Highlight:

IXTY08N100D2

,

IXTY08N100D2 N Channel MOSFET IC

,

TO-252AA N Channel MOSFET IC

Product Description

CSR8670C-IBBH-R IC Chip RF TxRx + MCU Bluetooth Bluetooth v4.0 2.4GHz 112-VFBGA 
 
IXTY08N100D2 are from factory inventory, pls check your demands and pls contact us with with target price.
 
Specifications of IXTY08N100D2
 

TypeDescription
CategoryDiscrete Semiconductor Products
 Transistors
 FETs, MOSFETs
 Single FETs, MOSFETs
MfrIXYS
SeriesDepletion
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs21Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs14.6 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds325 pF @ 25 V
FET FeatureDepletion Mode
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product NumberIXTY08

 
Features of IXTY08N100D2
 
• Normally ON Mode
International Standard Packages
• Molding Epoxies Meet UL94V-0Flammability Classification
 
Applications of IXTY08N100D2
 
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
 
Addvantages of IXTY08N100D2
 
• Easy to Mount
• Space Savings
• High Power Density
 
Environmental & Export Classifications of IXTY08N100D2
 

AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095

 
IXTY08N100D2 N Channel MOSFET IC 1000 V 800mA Tc 60W Tc Surface Mount TO-252AA 0